Wide-bandgap SiC 650V Schottky Barrier Diodes Improve Efficiency in High-Power Systems

This family of 650V silicon carbide Schottky barrier diode is suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall solution size.

Key Features

  • Max. junction temperature 175°C
  • High-speed switching
  • High frequency operation
  • Positive temperature coefficient on VF
  • SPICE Models available
  • Thermal Models available

Applications

  • AD-DC conversion – PFC Boost
  • DC-DC, Solar inverters
  • Data center and server power
  • Telecom – Datacom power
  • UPS systems

Circuit Functions

  • PFC boost diode
  • Free-wheeling diode
  • Full wave bridge
  • Vienna bridgeless circuit

Product Portfolio

Part NumberPackageVRRM (V)IF (A)VF @ TA= 25°CIR @TA= 25°C Typ. (μA)IR @TA= 175°C Typ. (μA)IFSM (A)QC Typ (nC)
Typ. (V)Max. (V)
TSCDF06065G1ITO-220AC-2L65061.321.450.375.324420.8
TSCDF08065G181.350.615.57227.12
TSCDF10065G1101.340.85.428431.7
TSCDF12065G1121.360.7510.18837.16
TSCDF16065G1161.380.879.610049.03
TSCDF20065G1201.381.3711.312865.57
TSCDT06065G1TO-220AC-2L61.320.375.324420.8
TSCDT08065G181.350.615.57227.12
TSCDT10065G1101.340.85.428431.7
TSCDT12065G1121.360.7510.18837.16
TSCDT16065G1161.380.879.610049.03
TSCDT20065G1201.381.3711.312865.57
TSCDH16065G1TO-247-3L161.330.619.086829.18
TSCDH20065G1201.340.635.58835.39
TSCDH30065G1301.360.969.6112854.36
TSCDH40065G1401.330.818.7814064.85
Scroll to Top

Share Your Feedback

Feedback