*******************************************************
* Taiwan Semiconductor
* TSM60NE285CH
* N-Channel 600V
* Date: 2024-3-13
* Version: 1
*******************************************************
.SUBCKT TSM60NE285CH D G S

M1 3 GX S S NMOS W= 620200u L= 2u    
R1 D 3 206.751e-3 TC=7.78e-03,0.282e-04
CGS GX S 494.e-12  
RG G GY 1.2 
RTCV 100 S 1e6 TC=1.050e-03,4.20e-6
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD

C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE {  if(V(G,S)==0,V(13, 0)*I(V11),if( V(D,S)>300,(V(13, 0)-6)*I(V11),(V(13, 0)-6)*I(V11) ) )   }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}

+ -4 830
+ -1 700
+ 0 618
+ 0.5 577
+ 1 528
+ 2 447
+ 3 385
+ 4 352
+ 5 320
+ 6 294
+ 7 272
+ 8 253
+ 9 236
+ 10 221
+ 15 164
+ 20 12
+ 45 9
+ 300 7



CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 10712
+ 0.5 8470
+ 1 7307
+ 2 6140
+ 3 5456
+ 4 4975
+ 5 4620
+ 6 4324
+ 7 4089
+ 8 3885
+ 9 3707
+ 10 3560
+ 15 3002
+ 20 1087
+ 25 116
+ 30 62
+ 35 56
+ 40 51
+ 45 48
+ 50 43
+ 60 34
+ 70 30
+ 80 29
+ 300 23
+ 600 19

**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 24.9267e-06  NSUB = 14.643e+16 theta=1e-5 
+ NFS = 1.246e+12  KAPPA=10	VMAX=0.7e5
+ LD = 0 IS = 0 TPG = 1 )
*************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 638.77E-9 T_measured = 25 BV = 657
+TBV1= 9.3957E-04  TBV2= -0.8046E-06  IKF=1.1674
+RS = 6.5166E-3  N = 1.0225  IS = 1.0000E-12   EG=1.16
+XTI = 2.7e+00 TRS1 = 2.53e-03
+CJO = 0 )  
****************************************************************


.ENDS