*******************************************************
* Taiwan Semiconductor
* TSM60NE200CIT
* N-Channel 600V
* Date: 2024-3-12
* Version: 1
*******************************************************
.SUBCKT TSM60NE200CIT D G S

M1 3 GX S S NMOS W= 822000u L= 2u 
R1 D 3 144.576e-3 TC=8.08e-03,0.288e-04
CGS GX S 698e-12 

C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE {  if(V(G,S)==0,V(13, 0)*I(V11),if( V(D,S)>300,(V(13, 0)-3)*I(V11),(V(13, 0)-5)*I(V11) ) )   }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}
+ -6 990
+ -1 900
+ 0 816
+ 0.5 765
+ 1 705
+ 2 598
+ 3 513
+ 4 458
+ 5 416
+ 6 402
+ 7 366
+ 8 334
+ 9 318
+ 10 294
+ 15 213
+ 20 16
+ 45 12
+ 300 7.5


CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 14434
+ 0.5 11568
+ 1 9949
+ 2 8306
+ 3 7368
+ 4 6756
+ 5 6288
+ 6 5874
+ 7 5576
+ 8 5321
+ 9 5088
+ 10 4894
+ 15 4130
+ 20 1463
+ 25 134
+ 30 78
+ 35 63
+ 40 54
+ 45 50
+ 300 33
+ 600 28


RG G GY 1.1
RTCV 100 S 1e6 TC=1.050e-03,4.20e-6
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD

**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 25.7881e-06  NSUB = 14.643e+16 theta=1e-5 
+ NFS = 1.181e+12  KAPPA=10	VMAX=0.65e5
+ LD = 0 IS = 0 TPG = 1 )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 638.77E-9 T_measured = 25 BV = 636
+TBV1= 9.3957E-04  TBV2= -0.8046E-06  IKF=1.2975
+RS = 4.7524E-3  N = 1.0054  IS = 1.0000E-12   EG=1.16
+XTI = 2.7e+00 TRS1 = 2.93e-03
+CJO = 0)  
****************************************************************


.ENDS