*******************************************************
* Taiwan Semiconductor
* TSM60NE180CE
* N-Channel 600V
* Date: 2025-08-06
* Version: 1
*******************************************************
.SUBCKT TSM60NE180CE D G S

M1 3 GX S S NMOS W= 951600u L= 2u   
R1 D 3 130.302e-3 TC=7.38e-03,0.268e-04
CGS GX S 836e-12  
RG G GY 1.4 
RTCV 100 S 1e6 TC=1.050e-03,4.20e-6
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD
C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE {  if(V(G,S)==0,V(13, 0)*I(V11),if( V(D,S)>300,(V(13, 0)-7)*I(V11),(V(13, 0)-5)*I(V11) ) )   }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}
+ -8 1200
+ -5 1100
+ -1 1000
+ 0 941
+ 0.5 888
+ 1 814
+ 2 693
+ 3 606
+ 4 542
+ 5 492
+ 6 452
+ 7 417
+ 8 387
+ 9 343
+ 10 322
+ 15 252
+ 20 18
+ 45 13
+ 300 8
CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 15746
+ 0.5 12725
+ 1 10930
+ 2 9101
+ 3 8082
+ 4 7346
+ 5 6854
+ 6 6455
+ 7 6116
+ 8 5826
+ 9 5590
+ 10 5370
+ 15 4463
+ 20 1592
+ 25 146
+ 30 89
+ 35 69
+ 40 57
+ 45 54
+ 300 34
+ 600 28
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 31.50124e-06  NSUB = 17.843e+16 theta=1e-5 
+ NFS = 1.234e+12  KAPPA=10	VMAX=0.5e5
+ LD = 0 IS = 0 TPG = 1 )
***************************************************************  
.MODEL DBD D ( 
+FC = 0.1 TT = 638.77E-9 T_measured = 25 BV = 663
+TBV1= 9.3957E-04  TBV2= -0.8046E-06  IKF=1.6206
+RS = 4.7479E-3  N = 1.0049  IS = 1.0000E-12   EG=1.16
+XTI = 2.7e+00 TRS1 = 2.93e-03
+CJO = 0)  
****************************************************************


.ENDS