*******************************************************
* Taiwan Semiconductor
* TSM60NE145CIT
* N-Channel 600V
* Date: 2024-03-08
* Version: 1
*******************************************************
.SUBCKT TSM60NE145CIT D G S

M1 3 GX S S NMOS W= 2595900u L= 2u   
R1 D 3 101.825e-3 TC=7.78e-03,0.303e-04
*CGS GX S 95e-12 
RG G GY 1.4 
RTCV 100 S 1e6 TC=1.050e-03,4.20e-6
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD

C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE {  if(V(G,S)==0,V(13, 0)*I(V11),if( V(D,S)>300,(V(13, 0)-7)*I(V11),(V(13, 0)-5)*I(V11) ) )   }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}
+-2 1300
+-1 1200
+ 0 1140
+ 0.5 1057
+ 1 970
+ 2 825
+ 3 740
+ 4 670
+ 5 610
+ 6 560
+ 7 520
+ 8 480
+ 9 449
+ 10 422
+ 15 315
+ 20 20
+ 45 15
+ 300 8
CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 19384
+ 0.5 14894
+ 1 13112
+ 2 10884
+ 3 9633
+ 4 8772
+ 5 8150
+ 6 7635
+ 7 7236
+ 8 6920
+ 9 6633
+ 10 6377
+ 15 5399
+ 20 2142
+ 25 178
+ 30 120
+ 35 95
+ 40 78
+ 45 69
+ 100 49
+ 300 41
+ 600 32
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 12.258e-06  NSUB = 14.943e+16 theta=1e-5 
+ NFS = 1.042e+12  KAPPA=4	VMAX=0.7e5
+ LD = 0 IS = 0 TPG = 1 )
*************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 638.77E-9 T_measured = 25 BV = 643
+TBV1= 9.3957E-04  TBV2= -0.8046E-06  IKF=1.4827
+RS = 3.7530E-3  N = .99281  IS = 1.0000E-12   EG=1.16
+XTI = 2.7e+00 TRS1 = 3.76e-03
+CJO = 0)  
****************************************************************


.ENDS