*******************************************************
* Taiwan Semiconductor
* TSM60NE110CIT
* N-Channel 600V
* Date: 2024-3-7
* Version: 1
*******************************************************
.SUBCKT TSM60NE110CIT D G S

M1 3 GX S S NMOS W= 3156800u L= 2u    
R1 D 4 63.997e-03 TC=6.68e-03,0.213e-04
J1 4 S 3 JD 2605351u 
.MODEL JD NJF (VTO = -20.10  BETA = 9.369e-01
+BETATCE = -5.4e-01 VTOTC = 0.08
+IS = 1e-18 N = 10 )
CGS GX S 353.e-12 
CGD GX D 0.524e-12 
RG G GY 1.4 
RTCV 100 S 1e6 TC=1.050e-03,4.20e-6
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD
C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE { V(13, 0)*I(V11) }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}
+ 0 1446
+ 0.5 1375
+ 1 1271
+ 2 1081
+ 3 959
+ 4 855
+ 5 777
+ 6 713
+ 7 660
+ 8 616
+ 9 569
+ 10 531
+ 15 392
+ 20 22
+ 45 19
+ 100 14
+ 300 9
CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 26984
+ 0.5 21202
+ 1 18346
+ 2 14986
+ 3 13578
+ 4 12358
+ 5 11450
+ 6 10674
+ 7 10110
+ 8 9627
+ 9 9229
+ 10 8846
+ 15 7483
+ 20 2627
+ 25 245
+ 30 139
+ 35 114
+ 40 102
+ 45 95
+ 100 73
+ 300 57
+ 600 47
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 14.06e-06 NSUB = 16.043e+16 theta=1e-5 
+ NFS = 1.599e+12  VMAX=0.65e5 KAPPA=5
+ LD = 0 IS = 0 TPG = 1 )
***************************************************************  
.MODEL DBD D ( 
+FC = 0.1 TT = 638.77E-9 T_measured = 25 BV = 620
+TBV1= 9.3957E-04  TBV2= -0.8046E-06  IKF=1.4127
+RS = 2.9013E-3  N = .97454  IS = 1.0000E-12   EG=1.16
+XTI = 2.7e+00 TRS1 = 3.76e-03
+CJO = 0)  
****************************************************************


.ENDS