*******************************************************
* Taiwan Semiconductor
* TSM60NE084CIT
* N-Channel 600V
* Date: 2024-03-06
* Version: 1
*******************************************************
.SUBCKT TSM60NE084CIT D G S

M1 3 GX S S NMOS W= 3000000u L= 2u   
R1 D 4 8.726e-03 TC=16.88e-03,0.900e-04
J1 4 S 3 JD 2605351u 
.MODEL JD NJF (VTO = -16.10  BETA = 2.405e-01
+BETATCE = -5.4e-01 VTOTC = -0.0
+IS = 1e-18 N = 10 )
CGS GX S 981p 
RG G GY 0.9 
RTCV 100 S 1e6 TC=1.050e-03,4.20e-6
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD
C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE { V(13, 0)*I(V11) }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}
+ 0 1805.4
+ 0.5 1711.8
+ 1 1587.96
+ 2 1351.08
+ 3 1191.96
+ 4 1069.56
+ 5 968.04
+ 6 890.64
+ 7 812.88
+ 8 760.68
+ 9 712.8
+ 10 666.36
+ 15 484.2
+ 20 24
+ 45 21
+ 300 10
CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 34691
+ 0.5 27068
+ 1 23372
+ 2 19466
+ 3 17281
+ 4 15390
+ 5 14269
+ 6 13679
+ 7 12964
+ 8 12306
+ 9 11767
+ 10 11277
+ 15 9467
+ 20 3356
+ 25 314
+ 30 202
+ 35 165
+ 40 137
+ 45 128
+ 50 121
+ 60 95
+ 70 89
+ 80 87
+ 90 85
+ 100 83
+ 300 70
+ 600 58


**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 21.3326e-06 NSUB = 15.743e+16 theta=1.e-6
+ NFS = 12.86e+11  KAPPA=12 VMAX=0.6e5
+ LD = 0 IS = 0 TPG = 1 )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 638.77E-9 T_measured = 25 BV = 662
+TBV1= 9.7720E-04  TBV2= -1.1074E-06  IKF=1.9234
+RS = 2.7855E-3  N = .96916  IS = 1.0000E-12   EG=1.16
+XTI = 2.7e+00 TRS1 = 3.76e-03
+CJO = 0)  
****************************************************************


.ENDS