*******************************************************
* Taiwan Semiconductor
* TSM60NE069PW
* N-Channel 600V
* Date: 2024-3-13
* Version: 1
*******************************************************
.SUBCKT TSM60NE069PW D G S

M1 3 GX S S NMOS W= 3000000u L= 2u   
R1 D 4 10.386e-03 TC=13.88e-03,0.600e-04
J1 4 S 3 JD 2605351u 
.MODEL JD NJF (VTO = -16.10  BETA = 3.405e-01
+BETATCE = -5.4e-01 VTOTC = -0.0
+IS = 1e-18 N = 10 )
CGS GX S 1802p 
RG G GY 1
RTCV 100 S 1e6 TC=1.050e-03,4.20e-6
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD
C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE { V(13, 0)*I(V11) }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}

+-2 2400
+ 0 2182
+ 0.5 2099
+ 1 1961
+ 2 1695
+ 3 1500
+ 4 1355
+ 5 1225
+ 6 1136
+ 7 1045
+ 8 971
+ 9 906
+ 10 848
+ 15 638
+ 20 26
+ 45 23
+ 300 12

CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 42921
+ 0.5 33391
+ 1 28759
+ 2 23795
+ 3 21100
+ 4 19211
+ 5 17822
+ 6 16301
+ 7 15491
+ 8 14759
+ 9 14114
+ 10 13542
+ 15 10632
+ 20 4287
+ 25 458
+ 30 259
+ 35 225
+ 40 206
+ 45 188
+ 50 176
+ 60 156
+ 70 130
+ 80 121
+ 90 114
+ 300 84
+ 600 69

**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 26.4326e-06 NSUB = 15.043e+16 theta=1.e-6
+ NFS = 10.86e+11  KAPPA=7 VMAX=0.6e5
+ LD = 0 IS = 0 TPG = 1 )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 678.77E-9 T_measured = 25 BV = 645
+TBV1= 9.7720E-04  TBV2= -1.1074E-06  IKF=1.9234
+RS = 2.4855E-3  N = .96916  IS = 1.0000E-12   EG=1.16
+XTI = 2.7e+00 TRS1 = 2.76e-03
+CJO = 0)  
****************************************************************


.ENDS