*******************************************************
* Taiwan Semiconductor
* TSM60NE048PW
* N-Channel 600V
* Date: 2024-03-06
* Version: 1
*******************************************************
.SUBCKT TSM60NE048PW D G S

M1 3 GX S S NMOS W= 6600000u L= 2u    
R1 D 4 23.669e-03 TC=5.98e-03,0.123e-04
J1 4 S 3 JD 2605351u 
.MODEL JD NJF (VTO = -20.10  BETA = 9.369e-01
+BETATCE = -5.4e-01 VTOTC = 0.08
+IS = 1e-18 N = 10 )
CGS GX S 1208.e-12  
RG G GY 1.1 
RTCV 100 S 1e6 TC=1.050e-03,4.20e-6
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD
C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE { V(13, 0)*I(V11) }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}
+ -4 3000
+ -2 2800
+ 0 2592
+ 0.5 2526
+ 1 2386
+ 2 1995
+ 3 1775
+ 4 1610
+ 5 1466
+ 6 1360
+ 7 1264
+ 8 1181
+ 9 1000
+ 10 999
+ 15 750
+ 20 27
+ 45 25
+ 300 14
CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 60238
+ 0.5 46644
+ 1 40038
+ 2 32985
+ 3 29085
+ 4 26360
+ 5 24431
+ 6 22900
+ 7 21703
+ 8 20599
+ 9 19700
+ 10 18924
+ 15 12231
+ 20 6026
+ 25 537
+ 30 386
+ 35 313
+ 40 248
+ 45 217
+ 50 196
+ 60 164
+ 70 150
+ 80 146
+ 90 144
+ 100 140
+ 300 115
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 12.06e-06 NSUB = 14.043e+16 theta=1e-5 
+ NFS = 0.9878e+12  VMAX=1.2e5 KAPPA=5
+ LD = 0 IS = 0 TPG = 1 )
*************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 7.8E-7 T_measured = 25 BV = 655
+TBV1= 9.3558E-04  TBV2= -8.3570E-07  IKF=2.5586
+RS = 2.0733E-3  N = .94645  IS = 1.0000E-12   EG=1.16
+XTI = 2.7e+00 TRS1 = 3.76e-03
+CJO = 0)  
****************************************************************


.ENDS