*******************************************************
* Taiwan Semiconductor
* TSM600NA25CIT
* N-Channel 250V
* Date: 2023-12-26
* Version: 2
*******************************************************
.SUBCKT TSM600NA25CIT D G S
M1  3  GX S S NMOS W=10037819u L=0.25u 
R1 D 3 52.639E-3 TC=8.5E-3 30.5E-6
CGS GX S 2432p
RG G GY 1m
RTCV 100 S 1.0e6 TC=-0.0e-04 0.0e-06
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
CDS S D 134p
C11    11   12         1E-12
V11    11   0          0Vdc
G11    3    GX         VALUE { V(13, 0)*I(V11) }
E11    12   0  3   GX  1
E12    13   0          TABLE {V(12)}
+-10 2074
+ 0 2064
+ 0.5 1674
+ 1 1349
+ 2 1024
+ 3 833
+ 4 703.2
+ 5 597.4
+ 6 521.8
+ 7 419.6
+ 8 400.4
+ 9 362
+ 10 321.6
+ 15 168.4
+ 20 43.8
+ 25 42.2
+ 30 39.4
+ 35 37.8
+ 40 36.8
+ 45 35
+ 50 33.8
+ 60 32.4
+ 70 30.8
+ 80 29.4
+ 90 27.8
+ 100 26.6
+ 110 25
+ 120 23.8
+ 125 22.4
+ 130 20.8
+ 140 19.4
+ 150 17.8
+ 160 16.6
+ 170 15
+ 180 13.8
+ 190 12.4
+ 200 10.8
+ 250 9.4
**************************************************************** 
.MODEL  NMOS      NMOS ( LEVEL  = 3   TOX    = 10E-8
+ NSUB   = 1.1E17  KP     =  1.45E-6        KAPPA  = 1E-2          
+ ETA    = 0       TPG    = 1         NFS    = 0.724E12  
+ IS     = 0       LD     = 0 )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1               TT = 5.621E-7      T_MEASURED = 25    BV = 289.7
+TBV1= 9.9464E-04       TBV2= -1.1335E-06
+RS =1.3232E-3          N = 1.0458         IS = 2.8248E-12    IKF=8.4025 
+EG = 1.149             XTI = 2.3e+00      TRS1 = 4.600e-03  
+CJO = 3658.4E-12        VJ =1.9884          M =0.9572 ) 
****************************************************************

.ENDS