*******************************************************
* Taiwan Semiconductor
* TSM220NB06LCR
* N-Channel 60V
* Date: 2023-12-27
* Version: 1
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.SUBCKT TSM220NB06LCR D G S
M1 3 GX S S NMOS  W=7279000u L=0.40u
M2 S GX S D PMOS1 W=7279000u L=0.1487u 
R1 D 3 16.812E-3 TC= 7.5399E-03 2.0622E-05
CGS GX S 85E-12
CGD GX D 0.1e-12
RG G GY 0.5
RTCV 100 S 1.0e6 TC=-0.5m 0u
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
CDS S D 10p
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3        TOX = 7E-8
+ KP = 6.0341E-6   NSUB = 1.74E17   VTO=2.261	THETA=0.0	VMAX=1.8e5
+ KAPPA = 1.7E-0   NFS = 0.0325E12  ETA= 0E-4  
+ LD = 0           IS = 0           TPG = 1  ) 
*************************************************************** 
.MODEL PMOS1 PMOS ( LEVEL = 3 TOX = 7E-8 
+NSUB =1.05E16 IS = 0 TPG = -1) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.5 TT = 14.43E-9  T_MEASURED = 25 BV = 75.5
+TBV1=1.0301E-03 TBV2=3.7741E-08
+RS = 1.5117E-3 N =1.0301 IS = 0.8E-11   IKF=1.8671
+EG = 1.149 XTI = 1.6e+00 TRS1 = 3.610e-03  
+CJO = 76.734E-12   VJ =3.3941    M =0.39262) 
****************************************************************

.ENDS