*******************************************************
* Taiwan Semiconductor
* TSM150NB04LCR
* N-Channel 40V
* Date: 2023-12-04
* Version: 1
*******************************************************
.SUBCKT TSM150NB04LCR D G S
M1 3 GX S S NMOS  W= 6316290u L= 0.25u
M2 S GX S D PMOS1 W= 4316290u L= 0.11184u
R1 D 3 7.2265e-03 TC=5.9641E-03 1.8083E-05
CGS GX S 101.5e-12
RG G GY 1m
RTCV 100 S 1.0e6 TC=-26.5e-04 0.0e-06
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8
+ NSUB = 54.652e+16  ETA=2e-4               VTO=2.47
+ KAPPA = 18.158e-01 NFS = 0.011e+11        KP=2.973e-6   
+ LD = 0 IS = 0 TPG = 1 ) 
*************************************************************** 
.MODEL PMOS1 PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 4.318e+16 IS = 0 TPG = -1) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 9.6778E-9 T_MEASURED = 25 BV = 52
+TBV1= 9.1135E-04   TBV2=-1.3690E-06
+RS =2.2105E-3  N = .94512    IS = 1.00E-12    IKF=2.0718
+EG = 1.149 XTI = 2.8e+00 TRS1 = 5.500e-03  
+CJO = 199.84E-12  VJ =.3905 M =.38072) 
****************************************************************

.ENDS