*******************************************************
* Taiwan Semiconductor
* TSM150NB04DCR
* N-Channel 40V
* Date: 2023-12-06
* Version: 1
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.SUBCKT TSM150NB04DCR D G S
M1 3 GX S S NMOS  W= 6316290u L= 0.25u
M2 S GX S D PMOS1 W= 6316290u L= 0.07565u
R1 D 3 7.9803e-03 TC=6.1322E-03 1.5507E-05
CGS GX S 19.4e-12
RG G GY 1m
RTCV 100 S 1.0e6 TC=-20.5e-04 0.0e-06
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8
+ NSUB = 55.652e+16 ETA=1e-4 VTO=4.25
+ KAPPA = 37.158e-01 NFS = 10.492e+11        Kp=2.292e-6   
+ LD = 0 IS = 0 TPG = 1 ) 
*************************************************************** 
.MODEL PMOS1 PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 3.892e+16 IS = 0 TPG = -1) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 10.1703E-9 T_MEASURED = 25 BV = 48.4
+TBV1= 1.0318E-03  TBV2=-5.4743E-07
+RS =2.4586E-3  N = .99366    IS = 0.87E-12    IKF=5.5538
+EG = 1.149 XTI = 2.3e+00 TRS1 = 4.500e-03  
+CJO = 254.08E-12  VJ =.3905 M =.39994) 
****************************************************************

.ENDS