*******************************************************
* Taiwan Semiconductor
* TSM130NB06LCR
* N-Channel 60V
* Date: 2023-11-29
* Version: 1
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.SUBCKT TSM130NB06LCR D G S
M1 3 GX S S NMOS  W=11521708u L=0.40u
M2 S GX S D PMOS1 W=11521708u L=0.08885u 
R1 D 3 11.392E-3 TC= 7.4399E-03 2.1622E-05
CGS GX S 428E-12
CGD GX D 0.1e-12
RG G GY 0.5
RTCV 100 S 1.0e6 TC=-1.8m 0u
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
CDS S D 19p 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 7E-8
+ KP = 7.9567E-6   NSUB = 3.04E17  VTO=2.72	VMAX=0.7e5
+ KAPPA = 3.2E-0 NFS = 0.3065E12  ETA= 1E-4           
+ LD = 0 IS = 0 TPG = 1  ) 
*************************************************************** 
.MODEL PMOS1 PMOS ( LEVEL = 3 TOX = 7E-8 
+NSUB =1.5E16 IS = 0 TPG = -1) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.5 TT = 12.7156E-9  T_MEASURED = 25 BV = 73.9 
+TBV1=1.1144E-03  TBV2=-1.0853E-06
+RS = 1.1844E-3 N = .93053 IS = 0.700E-12   IKF=2.1381
+EG = 1.149 XTI = 2.8e+00 TRS1 = 6.610e-03  
+CJO = 473.26E-12    VJ =.3905   M =.45469) 
****************************************************************

.ENDS