*******************************************************
* Taiwan Semiconductor
* TSM080NB03CR
* N-Channel 30V
* Date: 2023-11-17
* Version: 1
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.SUBCKT TSM080NB03CR D G S
M1 3 GX S S NMOS  W= 6401830u L= 0.25u
M2 S GX S D PMOS1 W= 6401830u L= 0.113u
R1 D 3 4.3261e-03 TC=4.997e-03 1.405e-05 
CGS GX S 70.7e-12
RG G GY 1m
RTCV 100 S 1.0e6 TC=-7.0e-04 6.5e-06
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8
+ NSUB = 11.326e+16 VMAX=1.8e5 
+ KAPPA = 2.4581e-01 NFS = 4.730e+11 ETA=2.5e-4 KP=3.58378e-6e-6
+ LD = 0 IS = 0 TPG = 1 ) 
*************************************************************** 
.MODEL PMOS1 PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 4.968e+16 IS = 0 TPG = -1) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.143E-8 T_MEASURED = 25 BV = 36.41
+TBV1= 8.8589E-04 TBV2=-1.0686E-06
+RS =1.4731E-3  N = .97497  IS = 1.3659E-12  IKF=4.0887 
+EG = 1.149 XTI = 2.5e+00 TRS1 = 4.600e-03  
+CJO = 261.12E-12 VJ =.3905 M =.44088) 
****************************************************************

.ENDS