*******************************************************
* Taiwan Semiconductor
* TSM076NH04DCR_MOS
* N-Channel 40V (D-S) Power MOSFET
* Date: 2023-04-07
*******************************************************
.SUBCKT TSM076NH04DCR_MOS D G S 
**+params:  EP= {EP}
M1 3 GX S S NMOS W= 2577894u L= 0.25u 
M2 S GX S D PMOS W= 2577894u L= 0.30u
R1 D 3 5.65m TC= 40e-4 10u
CGS GX S 800p
CGD GX D 35p
RG G GY 0.85
RTCV 100 S 1.0e6 TC=-1.4m 5.8u
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 4.5e-8
+ RS = 0 KP = 7.85e-5  NSUB = 14e+16  THETA= 0.5 VTO= 4.0
+ KAPPA = 6e-2 NFS = 8.5e+11 Rds=15e+9 
+ LD = 0 IS = 0 TPG = 1  ) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 4.5e-8  
+NSUB = 1e+15 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 30.0e-9 T_MEASURED = 25 BV = 44.93 IBV=250u TBV1=710e-6 TBV2=-0.39u
+RS = 3.5m N = 1.084e+00 IS = 5.2e-12
+EG = 1.149 XTI = 1.026e+00 TRS1 = 2.410e-03 
+CJO = 800p VJ = 1.4 M = 0.50 ) 
****************************************************************
.ENDS