*******************************************************
* Taiwan Semiconductor
* TSM075NH10LCR
* N-Channel 100V
* Date: 2025-7-14
* Version: 1
*******************************************************

.subckt TSM075NH10LCR D G S 
M1 3x GX S S NMOS  W=8.9634 L=0.40u
R1 D 3x 3.907E-3 TC= 0.006139 2.E-05
CGS GX S 650E-12
RG G GY 0.7
RTCV 100 S 1.0e6 TC=-0.001283 6.875E-06
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
.MODEL NMOS NMOS ( LEVEL = 3        TOX = 7.2E-08
+ KP = 1.3084E-05   NSUB = 6.534E+16   	
+ KAPPA = 0.1725   NFS = 3.961E+11  ETA= 0.0001   THETA=0.3        
+ LD = 0           IS = 0           TPG = 1  )  
.MODEL DBD D ( 
+FC = 0.5 TT = 5.0E-8    T_MEASURED = 25 BV = 111.3 
+TBV1=0.001097  TBV2=-3.879E-06
+RS = 0.0012193  IS=4.29744E-12   IKF=9.736 N=1.045
+EG = 1.149 XTI = 2.548 TRS1 = 0.00221  
+CJO = 0  ) 

C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE { V(13, 0)*I(V11) }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}
+ 0 641.55
+ 0.5 409.71
+ 1 348.81
+ 2 296.1
+ 3 270.48
+ 4 242.76
+ 5 225.54
+ 6 212.1
+ 7 199.08
+ 8 189.21
+ 9 182.7
+ 10 169.47
+ 15 140.07
+ 20 111.51
+ 25 92.4
+ 30 80.64
+ 35 69.3
+ 40 54.39
+ 45 42.84
+ 50 37.38
+ 60 32.13
+ 70 27.3
+ 80 22.05
+ 90 16.59
+ 100 11.34


CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 2526.6
+ 0.5 2233.8
+ 1 2128.4
+ 2 2037.4
+ 3 1986.8
+ 4 1949.2
+ 5 1916.2
+ 6 1884.4
+ 7 1856.8
+ 8 1827.2
+ 9 1795.2
+ 10 1775.8
+ 15 1653.6
+ 20 1548.4
+ 25 1462.6
+ 30 1368.2
+ 35 1276.4
+ 40 1193.8
+ 45 987
+ 50 430.2
+ 60 296.8
+ 70 260.2
+ 80 239.6
+ 90 226.6
+ 100 218

.ENDS