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* Taiwan Semiconductor_
* TSCDT10065G1
* 10A, 650V SiC Merged PIN Schottky Diode
* Date: 2024-04-06
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*The model describes the characteristics of typical devices and is subject to change without notice. 		*
*SPICE model can be used for evaluating device performance, but it cannot reflect the real device 		*
*performance under any kind of conditions, nor to replace bread boarding for final verification. 		*
*TSC does not assume any warranty or liability whatever arising from their use. TSC does not assume 		*
*any warranty or liability for the values and functions of the SPICE model. The simulation results of 		*
*the SPICE model are to the best of our knowledge correct. However, users are fully responsible to verify	*
* and validate these results under the operating conditions and its application. TSC will not bear the 		*
*responsibility arising out of or in connection with any malfunction of the simulation model. In any kind 	*
*of cases, the current datasheet information is the design guideline and the only actual performance 		*
*specification. SPICE model provided by TSC is not warranted by TSC as completely and comprehensively 		*
*representing all the specifications and operating characteristics of the semiconductor product.		*
*
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.MODEL TSCDT10065G1 D
+ IS=95.097E-21
+ N=.7889
+ RS=50.047E-3
+ IKF=679.29
+ CJO=587.80E-12
+ M=.45159
+ VJ=1.7236
+ ISR=14.082E-9
+ NR=3.5100
+ BV=650
+ IBV=2E-5
+ TT=49.326E-9

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