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* Taiwan Semiconductor
* TQM130NB06CR
* 60V,50A N-Channel Power MOSFET
* Date: 2020-07-20
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.SUBCKT TQM130NB06CR D G S 
**+params:  EP= {EP}
M1 3 GX S S NMOS W= 1536842u L= 0.85u 
M2 S GX S D PMOS W= 1536842u L= 0.85u 
R1 D 3 6.9m TC=9.2m 25.5u 
CGS GX S 1.25n
CGD GX D 25p
RG G GY 1.5
RTCV 100 S 1.28e6 TC=-2.6m 20u
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 4.2e-8 
+ RS = 0 KP = 80e-6  NSUB = 2e+16  THETA= 0.5 VTO= 4.3
+ KAPPA = 6.7 NFS = 2.4e+12 Rds=11e+10
+ LD = 0 IS = 0 TPG = 1  ) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 4.2e-8  
+NSUB = 3.5e+15 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 20e-9 T_MEASURED = 25 BV = 73.155 IBV=250u TBV1=1100e-6 TBV2=-0.1p
+RS = 2.3m N = 1.1 IS = 35e-12
+EG = 1.199 XTI = 1.026e+00 TRS1 = 4.2m
+CJO = 380p VJ = 5.5 M = 0.885 ) 
****************************************************************
.ENDS