*******************************************************
* Taiwan Semiconductor
* TQM130NB04CV
* N-Channel 40V
* Date: 2023-12-07
* Version: 1
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.SUBCKT TQM130NB04CV D G S
M1 3 GX S S NMOS  W= 6182200u L= 0.25u
M2 S GX S D PMOS1 W= 2182200u L= 0.273375u
R1 D 3 8.1048e-03 TC=6.1322E-03 1.5507E-05
CGS GX S 11.8e-12
RG G GY 1m
RTCV 100 S 1.0e6 TC=-20.5e-04 0.0e-06
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8
+ NSUB = 23.752e+16 ETA=3e-4 			 VMAX=3e5
+ KAPPA =12.558e-01 NFS = 11.978e+11        KP=4.3593e-6   
+ LD = 0 IS = 0 TPG = 1 ) 
*************************************************************** 
.MODEL PMOS1 PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 3.318e+16 IS = 0 TPG = -1) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 10.6767E-9 T_MEASURED = 25 BV = 49
+TBV1= 1.0174E-03  TBV2=-5.8926E-07
+RS =1.7657E-3  N = .99163    IS = 1.0000E-12    IKF=4.3013 
+EG = 1.149 XTI = 2.5e+00 TRS1 = 5.000e-03  
+CJO = 223.45E-12  VJ =.3905 M =.40045) 
****************************************************************

.ENDS