*******************************************************
* Taiwan Semiconductor
* TQM048NH10LCR
* N-Channel 100V
* Date: 2024-7-30
* Version: 1
*******************************************************
.SUBCKT TQM048NH10LCR D G S

M1 3x GX S S NMOS  W=14.264 L=0.40u
R1 D 3x 2.712E-3 TC= 0.005339 2.29E-05
CGS GX S 360E-12
RG G GY 0.7
RTCV 100 S 1.0e6 TC=-0.001283 6.875E-06
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
.MODEL NMOS NMOS ( LEVEL = 3        TOX = 6.186E-08
+ KP = 1.211608E-05   NSUB = 8.234E+16   	
+ KAPPA = 0.28   NFS = 5.361E+11  ETA= 0.0001   THETA=0.3        
+ LD = 0           IS = 0           TPG = 1  )  
.MODEL DBD D ( 
+FC = 0.5 TT = 5.7E-8    T_MEASURED = 25 BV = 111.5 
+TBV1=9.1961E-4  TBV2=-2.6762E-06
+RS = 0.0008193  IS=6.792E-12   IKF=9.736 N=1.045
+EG = 1.149 XTI = 2.548 TRS1 = 0.00421  
+CJO = 0  ) 

C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE { V(13, 0)*I(V11) }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}
+ 0 617.25
+ 0.5 488.5
+ 1 428.75
+ 2 368.75
+ 3 337.75
+ 4 303.75
+ 5 282.25
+ 6 265
+ 7 251.25
+ 8 240.5
+ 9 223.5
+ 10 211.5
+ 15 166.25
+ 20 133.25
+ 25 109.25
+ 30 89.25
+ 35 72.75
+ 40 54
+ 45 43.75
+ 50 38
+ 60 32.25
+ 70 25.5
+ 80 18.75
+ 90 13
+ 100 9


CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 3941.25
+ 0.5 3631
+ 1 3480.5
+ 2 3309.5
+ 3 3242
+ 4 3122.5
+ 5 3059.75
+ 6 2996.5
+ 7 2940.5
+ 8 2890
+ 9 2849
+ 10 2806
+ 15 2613.5
+ 20 2441.25
+ 25 2291.25
+ 30 2135.75
+ 35 1991
+ 40 1826.5
+ 45 1587.75
+ 50 572.75
+ 60 457
+ 70 403.25
+ 80 369.25
+ 90 345.75
+ 100 330.75


.ENDS