*******************************************************
* Taiwan Semiconductor
* TQM048NH10CR
* N-Channel 100V
* Date: 2024-07-26
* Version: 1
*******************************************************
.SUBCKT TQM048NH10CR D G S
M1 3x GX S S NMOS  W=6.264 L=0.40u
R1 D 3x 0.001671 TC= 0.006139 3.49E-05
CGS GX S 1472E-12
RG G GY 0.7
RTCV 100 S 1.0e6 TC=-0.001283 6.875E-06
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD  
.MODEL NMOS NMOS ( LEVEL = 3        TOX = 9.792E-08
+ KP = 2.459E-05   NSUB = 8.234E+16   	
+ KAPPA = 0.5725   NFS = 3.061E+11  ETA= 0.0001   THETA=0.7        
+ LD = 0           IS = 0           TPG = 1  )  
.MODEL DBD D ( 
+FC = 0.5 TT = 5.7E-8    T_MEASURED = 25 BV = 111.3 
+TBV1=0.001097  TBV2=-3.879E-06
+RS = 0.0008193  IS=6.792E-12   IKF=9.736 N=1.045
+EG = 1.149 XTI = 2.548 TRS1 = 0.00421  
+CJO = 0  ) 

C11    11   12         1E-12
V11    11   0          0Vdc
G11    D    GX         VALUE { V(13, 0)*I(V11) }
E11    12   0  D   GX  1
E12    13   0          TABLE {V(12)}
+ 0 471.8
+ 0.5 409
+ 1 371.4
+ 2 329.4
+ 3 294.8
+ 4 269.8
+ 5 252.4
+ 6 239.2
+ 7 217.2
+ 8 207.2
+ 9 196.2
+ 10 187
+ 15 151
+ 20 119.8
+ 25 97.8
+ 30 78.6
+ 35 67.6
+ 40 52.2
+ 45 46.6
+ 50 42.8
+ 60 35.8
+ 70 29.4
+ 80 22.8
+ 90 15.8
+ 100 9.2


CB1    B1   B2         1E-12
VB1    B1   0          0Vdc
GB1    D    S          VALUE { V(B3, 0)*I(VB1) }
EB1    B2   0  D   S  1
EB2    B3   0          TABLE {V(B2)}
+ 0 3987.6
+ 0.5 3653.6
+ 1 3509.6
+ 2 3335.8
+ 3 3240.8
+ 4 3193
+ 5 3093.6
+ 6 3032.2
+ 7 2979.6
+ 8 2931.2
+ 9 2883
+ 10 2836.4
+ 15 2633.4
+ 20 2470.4
+ 25 2309.8
+ 30 2164.6
+ 35 1994.4
+ 40 1818.8
+ 45 1568.8
+ 50 566
+ 60 456.4
+ 70 401.6
+ 80 367
+ 90 344
+ 100 328.2



.ENDS