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* Taiwan Semiconductor
* MBRAD8200H
* 8A, 200V Schottky Barrier Rectifier
* Date: 2023-03-03
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.MODEL MBRAD8200H D
+ IS=15.126E-6
+ N=2.0749
+ RS=51.356E-3
+ IKF=258.45
+ CJO=334.38E-12
+ M=.48251
+ VJ=.56602
+ ISR=10.010E-21
+ NR=4.9950
+ BV=200
+ IBV=1E-5
+ TT=49.326E-9


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